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 DSSK 28-01A DSSK 28-01AS
Power Schottky Rectifier
with common cathode
IFAV = 15 A VRRM = 100 V V F = 0.63 V
VRSM V 100 100
VRRM V 100 100
Type
A
C
A
TO-220 AB (A-Type)
A C A C (TAB)
DSSK 28-01A DSSK 28-01AS
TO-263 AB (AS-Type)
A A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol IFRMS IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 160C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sinev IAS = 9.5 A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive
Maximum Ratings 35 2x15 230 10 1 5000 -55...+175 175 -55...+150 A A A mJ A V/s C C C W Nm g
Features * International standard package * Very low VF * Extremely low switching losses * Low IRM-values * Epoxy meets UL 94V-0 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses
TC = 25C mounting torque (Version A only) typical
105 0.4...0.6 2
Symbol IR VF
Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 15 A; IF = 15 A; IF = 30 A; TVJ = 125C TVJ = 25C TVJ = 125C
Characteristic Values typ. max. 0.5 5 0.63 0.78 0.75 1.4 0.5 mA mA V V V K/W K/W
Dimensions see Outlines.pdf
RthJC RthCH
(Version A only)
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, conditions and dimensions.
(c) 2003 IXYS All rights reserved
1-2
228
DSSK 28-01A DSSK 28-01AS
100 A IF IR 100 mA 10 T =175C VJ 1 150C
125C
1000 pF CT
10
0.1 100C
75C TVJ = 175C 150C 125C 25C
0.01
50C
0.001 25C 100 0.0001 80 0 20 40 60 80 VR 100 V 0 20 40 60
TVJ= 25C
1 .0
0.2
0.4
0.6 VF
0.8 V 1.0
80 V 100 VR
Fig. 1 Maximum forward voltage drop characteristics
40 A 30 IF(AV) 20 d = 0.5 DC
Fig. 2 Typ. value of reverse current IR versus reverse voltage VR
25 W 20 P(AV) 15 d= DC 0.5 0.33 0.25 0.17 0.08
Fig. 3 Typ. junction capacitance CT versus reverse voltage VR
10000
A IFSM
1000
10 10
5
0 0 50 100 TC 150 C 200
0 0 5 10 15 20 25 IF(AV) 30 A
100 10
100
1000 s 10000 tP
Fig. 4 Average forward current IF(AV) versus case temperature TC
10 K/W
Fig. 5 Forward power loss characteristics
1 ZthJC
D = 0.5 0.33 0.25 0.17 0.08
0.1
Single Pulse
0.01 0.0001
DSSK 28-01A
0.001
0.01
0.1 t
s
1
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
228
(c) 2003 IXYS All rights reserved
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